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2-16 GHz Low Noise Gallium Arsenide FET Technical Data
ATF-13736
Features
* Low Noise Figure: 1.8 dB Typical at 12 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dB Typical at 12 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Available[1]
Description
The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of
36 micro-X Package
250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
Electrical Specifications, TA = 25C
Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f =12.0 GHz f = 12.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 25 40 -4.0 Min. Typ. Max. 1.5 1.8 2.1 11.5 9.0 7.0 17.5 8.5 55 50 -1.5 90 -0.5 2.2
GA
Gain @ NFO: VDS = 2.5 V, IDS = 20 mA
8.0
P1 dB G1 dB gm IDSS VP
Power Output @ 1 dB Gain Compression: VDS = 4 V, IDS = 40 mA 1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA Transconductance: VDS = 2.5 V, VGS = 0 V Saturated Drain Current: VDS = 2.5 V, VGS = 0 V Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA
Note: 1. Refer to PACKAGING section "Tape-and-Reel Packaging for Surface Mount Semiconductors".
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5965-8722E
ATF-13736 Absolute Maximum Ratings
Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Units V V V mA mW C C Absolute Maximum[1] + 5 -4 -6 IDSS 225 175 -65 to +175
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25C. 3. Derate at 2.5 mW/C for TCASE > 85C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175C. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.
Thermal Resistance: Liquid Crystal Measurement:
jc = 400C/W; TCH = 150C 1 m Spot Size[5]
Part Number Ordering Information
Part Number ATF-13736-TR1 ATF-13736-STR Devices Per Reel 1000 10 Reel Size 7" strip
ATF-13736 Noise Parameters: VDS = 2.5 V, IDS = 20 mA
Freq. GHz 4.0 6.0 8.0 12.0 14.0 NFO dB 1.1 1.3 1.5 1.8 2.1 opt Mag .71 .55 .46 .50 .52 Ang 102 147 -144 -40 -2 RN/50 .10 .07 .19 .88 1.17
ATF-13736 Typical Performance, TA = 25C
16 14
GA
25
25
12 10
GA (dB)
20
MSG
20
MSG
GAIN (dB)
15
MAG
GAIN (dB)
15
MAG MSG |S21|2
2.0
NFO (dB)
8 6
NFO
1.5 1.0 0.5 0 6.0 8.0 10.0
10
|S21|2
10
5
5
12.0 14.0 16.0
0 2.0
4.0
6.0
8.0 10.0 12.0 16.0
0 2.0
4.0
6.0
8.0 10.0 12.0 16.0
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2.5V, IDS = 20 mA, TA = 25C.
Figure 2. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2.5 V, IDS = 20 mA.
Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2.5 V, IDS = 20 mA.
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Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 2.5 V, IDS = 20 mA
Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .94 .86 .84 .77 .68 .59 .54 .56 .58 .60 .64 .68 .70 .72 .74 Ang. -46 -70 -90 -110 -135 -170 149 112 86 63 39 20 9 -1 -17 dB 11.0 10.2 9.8 9.6 9.9 9.9 9.5 8.8 8.1 7.6 7.0 6.4 6.0 5.2 4.6 S21 Mag. 3.56 3.23 3.08 3.02 3.14 3.13 2.99 2.75 2.53 2.41 2.24 2.08 1.99 1.83 1.70 Ang. 128 109 91 69 51 24 -1 -22 -43 -66 -90 -106 -130 -145 -177 dB -26.4 -25.2 -23.1 -20.9 -19.3 -18.0 -17.6 -16.9 -16.4 -16.5 -17.1 -17.6 -18.0 -18.2 -18.4 S12 Mag. .048 .055 .070 .090 .109 .126 .132 .143 .152 .149 .140 .132 .126 .123 .120 S22 Ang. 55 40 31 18 7 -12 -27 -43 -58 -73 -81 -90 -97 -111 -129 Mag. .59 .57 .56 .52 .47 .39 .30 .19 .11 .09 .15 .19 .19 .15 .11 Ang. -36 -47 -55 -63 -75 -92 -112 -121 -140 92 47 21 -3 -26 -34
Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 4 V, IDS = 40 mA
Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .88 .76 .68 .56 .42 .37 .47 .57 .63 .69 .77 .82 .85 .83 .81 Ang. -44 -68 -90 -113 -145 161 116 90 70 51 33 21 13 1 -17 dB 13.5 13.0 12.4 12.0 11.8 11.5 10.5 9.4 8.9 7.9 7.1 6.0 5.4 4.8 4.4 S21 Mag. 4.73 4.47 4.19 4.00 3.90 3.74 3.36 2.96 2.77 2.47 2.26 2.00 1.86 1.73 1.65 Ang. 130 107 86 66 44 20 -3 -23 -41 -63 -82 -101 -117 -134 -154 dB -26.4 -24.9 -22.5 -21.0 -19.8 -18.6 -17.9 -17.2 -17.4 -17.7 -18.0 -18.6 -19.2 -19.7 -19.8 S12 Mag. .048 .057 .075 .089 .102 .117 .128 .138 .135 .131 .126 .118 .110 .104 .102 S22 Ang. 64 52 39 32 21 9 -5 -19 -28 -39 -52 -65 -75 -83 -103 Mag. .67 .61 .57 .52 .44 .31 .17 .05 .06 .17 .26 .35 .39 .41 .42 Ang. -28 -39 -46 -52 -61 -75 -95 -143 128 100 75 62 54 49 41
A model for this device is available in the DEVICE MODELS section.
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36 micro-X Package Dimensions
2.15 (0.085) SOURCE 4 DRAIN 3 0.508 (0.020) 2.11 (0.083) DIA.
GATE 1
137
SOURCE 1.45 0.25 (0.057 0.010) 2 2.54 (0.100) 0.56 (0.022)
0.15 0.05 (0.006 0.002)
4.57 0.25 0.180 0.010
Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = 0.005 mm .xx = 0.13
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